unisonic technologies co., ltd mmdt8150 preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 2 copyright ? 2011 unisonic technologies co., ltd qw-r218-017.a low vcesat npn epitaxial planar transistor ? description the utc mmdt8150 is a dual npn epitaxial planar transistor. it has low v ce(sat) performance and the transistor elements are independent to eliminate interference. ? features * low v ce(sat) , v ce(sat) =40mv (typ.)@i c / i b = 50ma / 2.5ma * transistor elements are independent to eliminate interference. * mounting cost and area can be cut in half. ? equivalent circuit tr1 654 tr2 12 3 ? ordering information ordering number package packing lead free halogen free MMDT8150L-AL6-R mmdt8150g-al6-r sot-363 tape reel MMDT8150L-AL6-R (1)packing type (2)package type (1) r: tape reel (2) al6: sot-363 (3) halogen free, l: lead free (3)lead free ? marking g: halogen free l: lead free t81
mmdt8150 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 2 www.unisonic.com.tw qw-r218-017.a ? absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6 v collector current (dc) i c 800 ma collector current (pulse) i cp 1.5 (note 2) a power dissipation p d 200 (total) (note 3) mw junction temperature t j 150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. single pulse, p w =10ms 3. 150mw per element must not be exceeded. ? electrical characteristics (t a =25 c) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100a, i e =0 40 v collector-emitter breakdown voltage bv ceo i c =2ma, i b =0 25 v emitter-base breakdown voltage bv ebo i e =100a, i c =0 6 v collector cut-off current i cbo v cb =30v, i e =0 0.5 a emitter cut-off current i ebo v eb =6v, i c =0 0.5 a collector-emitter sa turation voltage (note 1) v ce ( sat ) 1 i c =50ma, i b =2.5ma 40 60 mv v ce ( sat ) 2 i c =400ma, i b =20ma 0.2 0.3 v v ce ( sat ) 3 i c =800ma, i b =80ma 0.3 0.5 v base-emitter voltage v be ( on ) v ce =1v, i c =10ma 1 v dc current gain h fe 1 v ce =1v, i c =100ma 180 560 h fe 2 v ce =1v, i c =500ma 40 h fe 3 v ce =2v, i c =50ma 82 current gain-bandwidth product f t v ce =5v, i c =50ma, f=100mhz 150 mhz output capacitance c obo v cb =10v, f=1mhz 15 pf note: 1. pulse test : pulse width 380s, duty cycle 2% utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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